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A Nanowire-Based Plasmonic Quantum Dot Laser
journal contribution
posted on 2016-03-30, 00:00 authored by Jinfa Ho, Jun Tatebayashi, Sylvain Sergent, Chee Fai Fong, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko ArakawaQuantum dots enable strong carrier
confinement and exhibit a delta-function like density of states, offering
significant improvements to laser performance and high-temperature
stability when used as a gain medium. However, quantum dot lasers
have been limited to photonic cavities that are diffraction-limited
and further miniaturization to meet the demands of nanophotonic-electronic
integration applications is challenging based on existing designs.
Here we introduce the first quantum dot-based plasmonic laser to reduce
the cross-sectional area of nanowire quantum dot lasers below the
cutoff limit of photonic modes while maintaining the length in the
order of the lasing wavelength. Metal organic chemical vapor deposition
grown GaAs–AlGaAs core–shell nanowires containing InGaAs
quantum dot stacks are placed directly on a silver film, and lasing
was observed from single nanowires originating from the InGaAs quantum
dot emission into the low-loss higher order plasmonic mode. Lasing
threshold pump fluences as low as ∼120 μJ/cm2 was observed at 7 K, and lasing was observed up to 125 K. Temperature
stability from the quantum dot gain, leading to a high characteristic
temperature was demonstrated. These results indicate that high-performance,
miniaturized quantum dot lasers can be realized with plasmonics.
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Temperature stabilityInGaAs quantum dot emission125 Kquantum dot gainlasing wavelengthcarrier confinement7 KInGaAs quantum dot stacksnanowire quantum dot laserscutoff limitorder plasmonic modegain mediumlaser performancephotonic cavitieschemical vapor depositionLasing thresholdsilver filmquantum dot lasersphotonic modes
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