Single Atomic Layer Ferroelectric on Silicon
Published on 2017-12-15T00:00:00Z (GMT) by
A single atomic layer of ZrO<sub>2</sub> exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance–voltage measurements of a ZrO<sub>2</sub> gate stack demonstrate that a reversible polarization of the ZrO<sub>2</sub> interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5–10 nm to exhibit significant hysteretic behavior (Park, et al. <i>Adv. Mater.</i> 2015, <i>27</i>, 1811).
Cite this collection
Dogan, Mehmet; Fernandez-Peña, Stéphanie; Kornblum, Lior; Jia, Yichen; Kumah, Divine P.; Reiner, James W.; et al. (2017): Single Atomic Layer Ferroelectric on Silicon. ACS Publications. Collection.