Signal-to-noise performance of a short-wave infrared nanoinjection imager
Posted on 2017-04-26 - 18:05
We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250A/W at 1550nm, −75°C, and 1.5V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e−) rms at a frame rate of 1950frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.
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Memis, Omer Gokalp; Kohoutek, John; Wu, Wei; Gelfand, Ryan M.; Mohseni, Hooman (2010). Signal-to-noise performance of a short-wave infrared nanoinjection imager. Optica Publishing Group. Collection. https://doi.org/10.6084/m9.figshare.c.3754160.v1
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Omer Gokalp Memis
Ryan M. Gelfand