Role of Hydrogen in the Preparation of Amorphous Silicon
Nanowires by Metal-Assisted Chemical Etching
Version 2 2018-09-21, 18:19
Version 1 2018-09-20, 12:51
Posted on 2018-09-21 - 18:19
Hydrogenated
amorphous silicon (a-Si:H) has recently proved to
be a suitable base material for the synthesis of silicon nanowires
(SiNWs) by metal-assisted chemical etching (MACE). The etching procedure
on this material shows an extraordinary sensitivity to slight compositional
changes and, although dopant influence on the process has been previously
addressed, little is known on the role of hydrogen. In this article,
we have studied the behavior of MACE on a-Si:H films with different
hydrogen contents and bond configurations. As-grown films were studied
by Raman spectroscopy, Fourier transform infrared spectroscopy, and
ion beam analysis to obtain a complete description of the material
composition. Additionally, these results were further correlated with
the morphology and characteristics of the obtained SiNWs, showing
that the material stability under MACE is reduced as the bond configuration
is shifted from monohydrides to polyhydrides. The effect of bond configuration
has an extraordinary importance regarding the material application,
as it is intrinsically related to the content of hydrogen, which simultaneously
controls the optical properties of the material. This study proves
that bond configuration also affects the nanostructuration, which
should be considered in future devices based on this material.
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Pinilla, Sergio; Barrio, Rocio; González, Nieves; Pérez Casero, Rafael; Márquez, Francisco; Sanz, José M.; et al. (2018). Role of Hydrogen in the Preparation of Amorphous Silicon
Nanowires by Metal-Assisted Chemical Etching. ACS Publications. Collection. https://doi.org/10.1021/acs.jpcc.8b05332
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AUTHORS (7)
SP
Sergio Pinilla
RB
Rocio Barrio
NG
Nieves González
RP
Rafael Pérez Casero
FM
Francisco Márquez
JS
José M. Sanz
CM
Carmen Morant