Perovskite Flash Memory with a Single-Layer Nanofloating
Gate
Posted on 2020-06-11 - 13:35
Here
we use triple-cation metal–organic halide perovskite
single crystals for the transistor channel of a flash memory device.
Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating
gate. It consists of a ternary blend of two organic semiconductors,
a p-type polyfluorene and an n-type fullerene that form a donor:acceptor
interpenetrating network that serves as the charge storage unit, and
of an insulating polystyrene that acts as the tunneling dielectric.
Under such a framework, we realize the first non-volatile flash memory
transistor based on a perovskite channel. This simplified, solution-processed
perovskite flash memory displays unique performance metrics such as
a large memory window of 30 V, an on/off ratio of 9 × 107, short write/erase times of 50 ms, and a satisfactory retention
time exceeding 106 s. The realization of the first flash
memory transistor using a single-crystal perovskite channel could
be a valuable direction for perovskite electronics research.
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Vasilopoulou, Maria; Kim, Byung Soon; Kim, Hyeong Pil; da Silva, Wilson Jose; Schneider, Fabio Kurt; Mat Teridi, Mohd Asri; et al. (2020). Perovskite Flash Memory with a Single-Layer Nanofloating
Gate. ACS Publications. Collection. https://doi.org/10.1021/acs.nanolett.0c01270
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AUTHORS (9)
MV
Maria Vasilopoulou
BK
Byung Soon Kim
HK
Hyeong Pil Kim
Wd
Wilson Jose da Silva
FS
Fabio Kurt Schneider
MM
Mohd Asri Mat Teridi
PG
Peng Gao
AM
Abd. Rashid bin Mohd Yusoff
MN
Mohammad Khaja Nazeeruddin
KEYWORDS
charge storage unit50 ms10 6memory window30 Vtransistor channelretention timeperovskite channelsingle-layer nanofloating gate10 nmperovskite electronics researchflash memory transistorternary blendSingle-Layer Nanofloating Gatesingle-crystal perovskite channelflash memory devicetunneling dielectricPerovskite Flash Memoryp-type polyfluorenesolution-processed perovskite flash memory displaysn-type fullereneperformance metrics