Observation of Strong Polarization Enhancement in
Ferroelectric Tunnel Junctions
Posted on 2019-09-18 - 21:14
Ferroelectric heterostructures,
with capability of storing data
at ultrahigh densities, could act as the platform for next-generation
memories. The development of new device paradigms has been hampered
by the long-standing notion of inevitable ferroelectricity suppression
under reduced dimensions. Despite recent experimental observation
of stable polarized states in ferroelectric ultrathin films, the out-of-plane
polarization components in these films are strongly attenuated compared
to thicker films, implying a degradation of device performance in
electronic miniaturization processes. Here, in a model system of BiFeO3/La0.7Sr0.3MnO3, we report
observation of a dramatic out-of-plane polarization enhancement that
occurs with decreasing film thickness. Our electron microscopy analysis
coupled with phase-field simulations reveals a polarization-enhancement
mechanism that is dominated by the accumulation of oxygen vacancies
at interfacial layers. The results shed light on the interplay between
polarization and defects in nanoscale ferroelectrics and suggest a
route to enhance functionality in oxide devices.
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Li, Linze; Cheng, Xiaoxing; Blum, Thomas; Huyan, Huaixun; Zhang, Yi; Heikes, Colin; et al. (2019). Observation of Strong Polarization Enhancement in
Ferroelectric Tunnel Junctions. ACS Publications. Collection. https://doi.org/10.1021/acs.nanolett.9b01878
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AUTHORS (16)
LL
Linze Li
XC
Xiaoxing Cheng
TB
Thomas Blum
HH
Huaixun Huyan
YZ
Yi Zhang
CH
Colin Heikes
XY
Xingxu Yan
CG
Chaitanya Gadre
TA
Toshihiro Aoki
MX
Mingjie Xu
LX
Lin Xie
ZH
Zijian Hong
CA
Carolina Adamo
DS
Darrell G. Schlom
LC
Long-Qing Chen
XP
Xiaoqing Pan
KEYWORDS
out-of-plane polarization componentsnext-generation memoriesdevice performanceFerroelectric Tunnel Junctions Ferroelectric heterostructuresoxide deviceselectron microscopy analysisout-of-plane polarization enhancementultrathin filmsfilm thicknessphase-field simulationsnanoscale ferroelectricsdevice paradigmsferroelectricity suppressionminiaturization processesultrahigh densitiesoxygen vacanciespolarization-enhancement mechanismStrong Polarization Enhancementreport observationmodel system