Monolithic
Two-Terminal
Tandem Solar Cells Using Sb2S3 and Solution-Processed
PbS Quantum Dots Achieving
an Open-Circuit Potential beyond 1.1 V
Posted on 2024-03-09 - 14:04
Multijunction
solar cells have the prospect of a greater
theoretical
efficiency limit than single-junction solar cells by minimizing the
transmissive and thermalization losses a single absorber material
has. In solar cell applications, Sb2S3 is considered
an attractive absorber due to its elemental abundance, stability,
and high absorption coefficient in the visible range of the solar
spectrum, yet with a band gap of 1.7 eV, it is transmissive for near-IR
and IR photons. Using it as the top cell (the cell where light is
first incident) in a two-terminal tandem architecture in combination
with a bottom cell (the cell where light arrives second) of PbS quantum
dots (QDs), which have an adjustable band gap suitable for absorbing
longer wavelengths, is a promising approach to harvest the solar spectrum
more effectively. In this work, these two subcells are monolithically
fabricated and connected in series by a poly(3,4-ethylene-dioxythiophene)
polystyrene sulfonate (PEDOT:PSS)–ZnO tunnel junction as the
recombination layer. We explore the surface morphology of ZnO QD films
with different spin-coating conditions, which serve as the PbS QD
cell’s electron transport material. Furthermore, we examine
the differences in photogenerated current upon varying the PbS QD
absorber layer thickness and the electrical and optical characteristics
of the tandem with respect to the stand-alone reference cells. This
tandem architecture demonstrates an extended spectral response into
the IR with an open-circuit potential exceeding 1.1 V and a power
conversion efficiency of 5.6%, which is greater than that of each
single-junction cell.
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Kern, Selina; Yi, Gyusang; Büttner, Pascal; Scheler, Florian; Tran, Minh-Hoa; Korenko, Sofia; et al. (2024). Monolithic
Two-Terminal
Tandem Solar Cells Using Sb2S3 and Solution-Processed
PbS Quantum Dots Achieving
an Open-Circuit Potential beyond 1.1 V. ACS Publications. Collection. https://doi.org/10.1021/acsami.3c16154