Fabrication
of Ge:Ga Hyperdoped Materials and Devices
Using CMOS-Compatible Ga and Ge Hydride Chemistries
Version 2 2018-10-19, 18:04
Version 1 2018-10-19, 18:03
Posted on 2018-10-19 - 18:04
We
report a versatile chemical vapor deposition (CVD) method to
dope Ge films with Ga atoms in situ over a wide concentration range
spanning from 3 × 1018 to 2.7 × 1020 cm–3. The method introduces a stable and volatile
Ga hydride [D2GaN(CH3)2]2 that reacts readily with Ge4H10 to deliver
Ga dopants controllably and systematically at complementary metal-oxide-semiconductor
compatible ultralow temperatures of ∼360 °C. Thick and
monocrystalline layers (1.3 μm) are produced on Si substrates
at growth rates approaching 50 nm/min. The doped crystals are fully
epitaxial and devoid of misfit defects and Ga precipitates as evidenced
by Rutherford backscattering spectrometry, X-ray diffraction, and
cross-sectional transmission electron microscopy. The Ga contents
measured by secondary ion mass spectrometry and the active carrier
concentrations determined by spectroscopic ellipsometry (as well as
Hall effect measurements in several cases) are in close agreement,
indicating near full activation. Photoluminescence spectra show a
strong emission peak at 0.79 eV corresponding to the direct gap E0 transition, evidence of the indirect transition,
and additional structures characteristic of p-type Ge. Electroluminescence
and I–V curves measured from
p(Ga)–i–n photodiodes are found to be at par with those
from boron-based reference devices. These results are promising and
demonstrate that a single-source CVD approach allows independent control
of Ga doping level and junction depth, producing flat dopant profiles,
high activation ratios, uniform distributions, and sharp interfaces.
This method potentially represents a viable alternative to state-of-the-art
boron-based p-type doping and activation of Ge-like materials.
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Xu, Chi; Wallace, Patrick M.; Ringwala, Dhruve A.; Menéndez, José; Kouvetakis, John (2018). Fabrication
of Ge:Ga Hyperdoped Materials and Devices
Using CMOS-Compatible Ga and Ge Hydride Chemistries. ACS Publications. Collection. https://doi.org/10.1021/acsami.8b10046
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AUTHORS (5)
CX
Chi Xu
PW
Patrick M. Wallace
DR
Dhruve A. Ringwala
JM
José Menéndez
JK
John Kouvetakis
KEYWORDS
Photoluminescence spectra showGa hydridegrowth ratesspectroscopic ellipsometryp-type Geconcentration rangemisfit defectsGe Hydride Chemistriesuniform distributionsGa contentsactivation ratiosemission peakX-ray diffractionGe 4 H 10Ge-like materialsmethodsingle-source CVD approachcarrier concentrationsion mass spectrometryRutherford backscattering spectrometryGa doping leveljunction depthGa atomsGa dopants controllablyboron-based p-type dopingtransmission electron microscopyGa precipitatesCMOS-Compatible Gadope Ge filmsHall effect measurementschemical vapor depositiongap E 0 transitionboron-based reference devicesultralow temperatures0.79 eVSi substratesdopant profiles