Electroforming-Free
Bipolar Resistive Switching in
GeSe Thin Films with a Ti-Containing Electrode
Posted on 2019-10-09 - 16:39
Chalcogenide
materials have been regarded as strong candidates
for both resistor and selector elements in passive crossbar arrays
owing to their dual capabilities of undergoing threshold and resistance
switching. This work describes the bipolar resistive switching (BRS)
of amorphous GeSe thin films, which used to show Ovonic threshold
switching (OTS) behavior. The behavior of this new functionality of
the material follows filament-based resistance switching when Ti and
TiN are adopted as the top and bottom electrodes, respectively. The
detailed analysis revealed that the high chemical affinity of Ti to
Se produces a Se-deficient GexSe1–x matrix and the interfacial Ti–Se layer. Electroforming-free
BRS behavior with reliable retention and cycling endurance was achieved.
The performance improvement was attributed to the Ti–Se interfacial
layer, which stabilizes the composition of GeSe during the electrical
switching cycles by preventing further massive Se migration to the
top electrode. The conduction mechanism analysis denotes that the
resistance switching originates from the formation and rupture of
the high-conductance semiconducting Ge-rich GexSe1–x filament. The high-resistance
state follows the modified Poole–Frenkel conduction.
CITE THIS COLLECTION
DataCite
3 Biotech
3D Printing in Medicine
3D Research
3D-Printed Materials and Systems
4OR
AAPG Bulletin
AAPS Open
AAPS PharmSciTech
Abhandlungen aus dem Mathematischen Seminar der Universität Hamburg
ABI Technik (German)
Academic Medicine
Academic Pediatrics
Academic Psychiatry
Academic Questions
Academy of Management Discoveries
Academy of Management Journal
Academy of Management Learning and Education
Academy of Management Perspectives
Academy of Management Proceedings
Academy of Management Review
Kim, Woohyun; Yoo, Chanyoung; Park, Eui-Sang; Ha, Manick; Jeon, Jeong Woo; Kim, Gil Seop; et al. (2019). Electroforming-Free
Bipolar Resistive Switching in
GeSe Thin Films with a Ti-Containing Electrode. ACS Publications. Collection. https://doi.org/10.1021/acsami.9b10891
or
Select your citation style and then place your mouse over the citation text to select it.
SHARE
Usage metrics
Read the peer-reviewed publication
AUTHORS (9)
WK
Woohyun Kim
CY
Chanyoung Yoo
EP
Eui-Sang Park
MH
Manick Ha
JJ
Jeong Woo Jeon
GK
Gil Seop Kim
KW
Kyung Seok Woo
YL
Yoon Kyeung Lee
CH
Cheol Seong Hwang
KEYWORDS
high-resistance stateperformance improvementElectroforming-free BRS behaviorElectroforming-Free Bipolar Resistive SwitchingGeSecycling enduranceselector elementsSe migrationchemical affinityTi-Containing Electrode Chalcogenide materialscrossbar arraysshow Ovonic thresholdfilament-based resistancebottom electrodesGeconduction mechanism analysisOTS