Directional Ostwald Ripening for Producing Aligned
Arrays of Nanowires
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Posted on 2019-06-13 - 14:44
The remarkable electronic
and mechanical properties of nanowires
have great potential for fascinating applications; however, the difficulties
of assembling ordered arrays of aligned nanowires over large areas
prevent their integration into many practical devices. In this paper,
we show that aligned VO2 nanowires form spontaneously after
heating a thin V2O5 film on a grooved SiO2 surface. Nanowires grow after complete dewetting of the film,
after which there is the formation of supercooled nanodroplets and
subsequent Ostwald ripening and coalescence. We investigate the growth
mechanism using molecular dynamics simulations of spherical Lennard–Jones
particles, and the simulations help explain how the grooved surface
produces aligned nanowires. Using this simple synthesis approach,
we produce self-aligned, millimeter-long nanowire arrays with uniform
metal–insulator transition properties; after their transfer
to a polymer substrate, the nanowires act as a highly sensitive array
of strain sensors with a very fast response time of several tens of
milliseconds.
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Lee, Hye Jin; Yang, U Jeong; Kim, Kyeong Nam; Park, Soojin; Kil, Kye Hyoung; Kim, Jun Soo; et al. (2019). Directional Ostwald Ripening for Producing Aligned
Arrays of Nanowires. ACS Publications. Collection. https://doi.org/10.1021/acs.nanolett.9b00684