Catalyst-Free
Growth of Two-Dimensional BCxN Materials
on Dielectrics by Temperature-Dependent
Plasma-Enhanced Chemical Vapor Deposition
Posted on 2020-07-07 - 14:33
Traditional methods
to prepare two-dimensional (2D) B–C–N
ternary materials (BCxN), such as chemical
vapor deposition (CVD), require sophisticated experimental conditions
such as high temperature, delicate control of precursors, and postgrowth
transfer from catalytic substrates, and the products are generally
thick or bulky films without the atomically mixed phase of B–C–N,
hampering practical applications of these materials. Here, for the
first time, we develop a temperature-dependent plasma-enhanced chemical
vapor deposition (PECVD) method to grow 2D BCxN materials directly on noncatalytic dielectrics at low temperature
with high controllability. The C, N, and B compositions can be tuned
by simply changing the growth temperature. Thus, the properties of
the as-made materials including band gap and conductivity are modulated,
which is hardly achieved by other methods. A 2D hybridized BC2N film with a mixed BC2N phase is produced, for
the first time, with a band gap of about 2.3 eV. The growth temperature
is 580–620 °C, much lower than that of traditional catalytic
CVD for growing BCxN. The product has
a p-type conducting property and can be directly applied in field-effect
transistors and sensors without postgrowth transfer, showing great
promise for this method in future applications.
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Yi, Kongyang; Jin, Zhepeng; Bu, Saiyu; Wang, Dingguan; Liu, Donghua; Huang, Yamin; et al. (2020). Catalyst-Free
Growth of Two-Dimensional BCxN Materials
on Dielectrics by Temperature-Dependent
Plasma-Enhanced Chemical Vapor Deposition. ACS Publications. Collection. https://doi.org/10.1021/acsami.0c08555
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AUTHORS (11)
KY
Kongyang Yi
ZJ
Zhepeng Jin
SB
Saiyu Bu
DW
Dingguan Wang
DL
Donghua Liu
YH
Yamin Huang
YD
Yemin Dong
QY
Qinghong Yuan
YL
Yunqi Liu
AW
Andrew Thye Shen Wee
DW
Dacheng Wei