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p‑Type Doping of Graphene with Cationic Nitrogen
journal contribution
posted on 2019-02-15, 00:00 authored by Sangwoo Chae, Gasidit Panomsuwan, Maria Antoaneta Bratescu, Katsuya Teshima, Nagahiro SaitoTailoring
electrical properties of graphene by nitrogen doping
is currently of great significance in a broad area of advanced applications.
Bonding configuration of nitrogen atoms in graphene plays a vital
role in controlling its electrical, chemical, and optical properties.
Here, we report for the first time a simple bottom-up synthesis of
a novel cationic nitrogen-doped graphene (CNG) by a solution plasma
(SP). A mixture of ionic liquid and organic solvent was used as starting
precursor. CNG exhibited an orthorhombic structure possibly due to
the presence cationic nitrogen in hexagonal graphene lattice. Nitrogen
doping content was found to be as high as 13.4 atom %. Electrical
characterization demonstrated that the CNG exhibited a p-type semiconducting
behavior with superior electrical conductivity and carrier concentration.
Such unique electrical characteristics of CNG are mainly attributed
to the presence of cationic nitrogen with preserved planar structure.