posted on 2020-02-04, 20:34authored byYoan Bourlier, Bruno Bérini, Mathieu Frégnaux, Arnaud Fouchet, Damien Aureau, Yves Dumont
The integration of
functional thin film materials with adaptable
properties is essential for the development of new paradigms in information
technology. Among them, complex oxides with perovskite structures
have huge potential based on the particularly vast diversity of physical
properties. Here, we demonstrate the possibility of transferring perovskite
oxide materials like SrTiO3 onto a silicon substrate using
an environmentally friendly process at the nanoscale by means of a
water-soluble perovskite sacrificial layer, SrVO3. Based
on in situ monitoring atomic force microscopy and photoemission studies,
we reveal that the dissolution is initiated from a strontium-rich
phase at the extreme surface of SrVO3. The nanothick SrTiO3-transferred layer
onto silicon presents appropriate morphology and monocrystalline quality,
providing a proof of concept for the integration and development of
all-perovskite-oxide electronics or “oxitronics” onto
any Si-based substrate.