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Download fileReal-Time in Situ Monitoring of Optical Absorption Changes in Visible-Light-Active TiO2 under Light Irradiation and Temperature-Programmed Annealing
journal contribution
posted on 2014-11-26, 00:00 authored by Vyacheslav N. Kuznetsov, Alexei
V. Emeline, Nadezhda I. Glazkova, Ruslan V. Mikhaylov, Nick SerponeWe
herein report a real-time optical reflectance/absorption study
of the photochromic behavior of visible light absorbing (yellow) titania
carried out using a newly designed novel accessory for a fluorescence
spectrophotometer. Yellow rutile titania, thermochemically synthesized
from technical grade titanium substrate, displays a fully reversible
sequence of electronic processes controllable by optical reflectance/absorption
photostimulated by UV or visible light; three absorption bands appeared
in the range 2.16–1.52 eV that could be thermally annealed
at temperatures up to 600 K. To carry out real-time studies of these
processes, a special device was designed and constructed which when
combined with the fluorescence spectrophotometer allowed for the measurement
of the changes in the sample’s absorption, ΔAλ(t), at wavelength λ that
corresponded to the maximum of the photoinduced absorption spectral
bands under monochromatic light irradiation or temperature-programmed
heating as well as light irradiation at a desired constant temperature.
The dependences of ΔAλ(t) obtained under heating at a constant rate and represented
in differential form (temperature-programmed absorbance annealing
(TPAA) spectra) determined the main advantage of the device developed,
since these spectra permit probing the energy levels of electron and
hole traps within the band gap of the yellow titania system. The results
of the present work show that TPAA spectra provide a new (in addition
to the absorption spectra) quantitative characterization of photoactive
materials that display photochromic properties. It is also demonstrated
that the TPAA spectra are convenient in the numerical modeling of
charge carrier dynamics in such metal-oxide semiconductors.