Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications
journal contribution
posted on 2016-12-23, 00:00 authored by Pulikanti
Guruprasad Reddy, Satyendra Prakash Pal, Pawan Kumar, Chullikkattil P. Pradeep, Subrata Ghosh, Satinder K. Sharma, Kenneth E. GonsalvesThe
present report demonstrates the potential of a polyarylenesulfonium
polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate]
(PAS), as a versatile nonchemically amplified negative tone photoresist
for next-generation lithography (NGL) applications starting from i-line
(λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼
13.5 nm) lithography. PAS exhibited considerable contrast (γ),
0.08, toward EUV and patterned 20 nm features successfully.
