Low Variability in Synthetic Monolayer MoS2 Devices
journal contributionposted on 11.07.2017, 00:00 by Kirby K. H. Smithe, Saurabh V. Suryavanshi, Miguel Muñoz Rojo, Aria D. Tedjarati, Eric Pop
Despite much interest in applications of two-dimensional (2D) fabrics such as MoS2, to date most studies have focused on single or few devices. Here we examine the variability of hundreds of transistors from monolayer MoS2 synthesized by chemical vapor deposition. Ultraclean fabrication yields low surface roughness of ∼3 Å and surprisingly low variability of key device parameters, considering the atomically thin nature of the material. Threshold voltage variation and very low hysteresis suggest variations in charge density and traps as low as ∼1011 cm−2. Three extraction methods (field-effect, Y-function, and effective mobility) independently reveal mobility from 30 to 45 cm2/V/s (10th to 90th percentile; highest value ∼48 cm2/V/s) across areas >1 cm2. Electrical properties are remarkably immune to the presence of bilayer regions, which cause only small conduction band offsets (∼55 meV) measured by scanning Kelvin probe microscopy, an order of magnitude lower than energy variations in Si films of comparable thickness. Data are also used as inputs to Monte Carlo circuit simulations to understand the effects of material variability on circuit variation. These advances address key missing steps required to scale 2D semiconductors into functional systems.
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energy variationsUltraclean fabrication yieldsbilayer regionsSynthetic Monolayer MoS 2 Devicesmonolayer MoS 2advances addressMonte Carlo circuit simulationsconduction bandLow VariabilityMoS 2Electrical propertiesscanning Kelvin probe microscopymaterial variabilitycmmobilitycharge densitydevice parametersSi filmsscale 2 D semiconductorssurface roughnesscircuit variationchemical vapor depositionthreshold voltage variationextraction methods