posted on 2018-06-20, 00:00authored byChenghao Wan, Erik H. Horak, Jonathan King, Jad Salman, Zhen Zhang, You Zhou, Patrick Roney, Bradley Gundlach, Shriram Ramanathan, Randall H. Goldsmith, Mikhail A. Kats
A limiting
optical diode is an asymmetric nonlinear device that
is bidirectionally transparent at low power but becomes opaque when
illuminated by sufficiently intense light incident from a particular
direction. We explore the use of a phase-transition material, vanadium
dioxide (VO2), as an active element of limiting optical
diodes. The VO2 phase transition can be triggered by optical
absorption, resulting in a change in refractive index orders of magnitude
larger than what can be achieved with conventional nonlinearities.
As a result, a limiting optical diode based on incident-direction-dependent
absorption in a VO2 layer can be very thin, and can function
at low powers without field enhancement, resulting in broadband operation.
We demonstrate a simple thin-film limiting optical diode comprising
a transparent substrate, a VO2 film, and a semitransparent
metallic layer. For sufficiently high incident intensity, our proof-of-concept
device realizes broadband asymmetric transmission across the near-infrared,
and is approximately ten times thinner than the free-space wavelength.