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High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

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journal contribution
posted on 10.01.2007, 00:00 by Ralf Thomas Weitz, Ute Zschieschang, Franz Effenberger, Hagen Klauk, Marko Burghard, Klaus Kern
Individual single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with a 2 nm thick silane-based organic self-assembled monolayer (SAM) gate dielectric have been manufactured. The FETs exhibit a unique combination of excellent device performance parameters. In particular, they operate with a gate−source voltage of only −1 V and exhibit good saturation, large transconductance, and small hysteresis (≤100 mV), as well as a very low subthreshold swing (60 mV/dec) under ambient conditions. The SAM-based gate dielectric opens the possibility of fabricating transistors operating at low voltages and constitutes a major step toward nanotube-based flexible electronics.

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