Film-Nanostructure-Controlled Inerasable-to-Erasable Switching Transition in ZnO-Based Transparent Memristor Devices: Sputtering-Pressure Dependency

We found that the write-once-read-many-times (WORM, inerasable)-to-rewritable (erasable) transition phenomenon results from the different structures of the filament, which is determined by the grain orientations of the deposited films. The conduction mechanism of this switching transition and its impact on the synaptic behavior in various ZnO nanostructures are also discussed. Furthermore, our WORM devices have a programmable physical damage function that can be exploited for use in security systems against data theft, hacking, and unauthorized use of software/hardware. This work proposes ZnO-based nonvolatile memory for invisible electronic applications and gives valuable insight into the design of WORM and rewritable memories.