Memory effects in self-assembled
monolayers (SAMs) of zinc porphyrin carboxylic acid on TiO2 electrodes have been demonstrated for the first time by evaluating
the photovoltaic and electron transfer properties of porphyrin-sensitized
solar cells prepared by using different immersion solvents sequentially.
The structure of the SAM of the porphyrin on the TiO2 was
maintained even after treating the porphyrin monolayer with different
neat immersion solvents (memory effect), whereas it was altered by
treatment with solutions containing different porphyrins (inverse
memory effect). Infrared spectroscopy shows that the porphyrins in
the SAM on the TiO2 could be exchanged with the same or
analogous porphyrin, leading to a change in the structure of the porphyrin
SAM. The memory and inverse memory effects are well correlated with
a change in porphyrin geometry, mainly the tilt angle of the porphyrin
along the long molecular axis from the surface normal on the TiO2, as well as with kinetics of electron transfer between the
porphyrin and TiO2. Such a new structure–function
relationship for DSSCs will be very useful for the rational design
and optimization of photoelectrochemical and photovoltaic properties
of molecular assemblies on semiconductor surfaces.