ph8b00601_si_001.pdf (213.37 kB)
Broadband White-Light Emission from Alumina Nitride Bulk Single Crystals
journal contribution
posted on 2018-06-24, 00:00 authored by Ge Liu, Chengyuan Yan, Guigang Zhou, Jiamin Wen, Zuoyan Qin, Qin Zhou, Baikui Li, Ruisheng Zheng, Honglei Wu, Zhenhua SunAlumina nitride bulk single crystals
(AlN BSCs) were grown using
a two-heater Physical Vapor Transport (th-PVT) method. The crystal
contains massive lattice defects including aluminum vacancy (VAl) and oxygen substitution (ON). The photoluminescence
(PL) spectrum of the crystal demonstrated a broad emission covering
from 250 to 1000 nm. By study the PL spectrum, abundant midgap states
in the wide band gap of AlN were nailed down. Based on the crystals,
metal-AlN-metal Schottky devices were fabricated. These devices emitted
high quality white light with color rendering index (CRI) over 90
under a bias of 60 V. Moreover, it was found that the white light
emitting property of AlN BSCs was adjustable through changing impurity
density and device structure. This research aims to pave a new way
for solid-state white light source.