posted on 2021-12-14, 15:38authored byYacun Zhang, Chongjian Zhang, Xiaochun Huang, Zhangqiang Yang, Kelvin H. L. Zhang, Ye Yang
The
self-trapping of a free carrier in transition-metal oxides
can lead to a small polaron, which is responsible for the inadequate
performance of the oxide-based optoelectronic applications. Thus,
fundamental understanding of the self-trapping mechanism is of key
importance for improving the performance of these applications. Herein,
the self-trapping in Co3O4 epitaxial monocrystalline
films is investigated primarily by transient absorption spectroscopy.
The spectral evolution corresponding to the ultrafast transition from
free carriers to small polarons is identified, which allows us to
extract the self-trapping kinetics. The relationship between the self-trapping
rate and temperature suggests a lack of thermal activation energy.
A barrierless self-trapping mechanism derived from the small polaron
framework is then proposed, which can successfully describe the observation
that self-trapping rate decreases linearly with increasing temperature.
Given that small polarons are ubiquitous in transition-metal oxides,
this self-trapping mechanism is potentially a general phenomenon in
these materials.