nn9b02985_si_001.pdf (2.6 MB)
Shape Engineering of InP Nanostructures by Selective Area Epitaxy
journal contribution
posted on 2019-06-10, 00:00 authored by Naiyin Wang, Xiaoming Yuan, Xu Zhang, Qian Gao, Bijun Zhao, Li Li, Mark Lockrey, Hark Hoe Tan, Chennupati Jagadish, Philippe CaroffGreater
demand for III–V nanostructures with more sophisticated
geometries other than nanowires is expected because of the recent
intensive investigation of nanowire networks that show great potential
in all-optical logic gates, nanoelectronics, and quantum computing.
Here, we demonstrate highly uniform arrays of InP nanostructures with
tunable shapes, such as membrane-, prism-, and ring-like shapes, which
can be simultaneously grown by selective area epitaxy. Our in-depth
investigation of shape evolution confirms that the shape is essentially
determined by pattern confinement and the minimization of total surface
energy. After growth optimization, all of the different InP nanostructures
grown under the same growth conditions show perfect wurtzite structure
regardless of the geometry and strong and homogeneous photon emission.
This work expands the research field in terms of producing nanostructures
with the desired shapes beyond the limits of nanowires to satisfy
various requirements for nanoelectronics, optoelectronics, and quantum
device applications.