ZnSe Heterocrystalline Junctions Based on Zinc Blende−Wurtzite Polytypism
figureposted on 28.01.2010, 00:00 by Lei Jin, Jianbo Wang, Shuangfeng Jia, Qike Jiang, Xue Yan, Ping Lu, Yao Cai, Liangzi Deng, Wallace C. H. Choy
ZnSe zinc blende−wurtzite (ZB−WZ) heterocrystalline junctions were successfully fabricated via pressure variation during the thermal evaporation process and characterized using electron microscopy techniques. Two types of ZB−WZ junction configurations were observed, and the orientation relationships, denoted as [111̅]ZB//WZ (type I) and ±ZB//WZ (type II), respectively, were determined in detail by systematic parallel beam selected area electron diffraction combined with stereographic projections. The relatively weak polarities on both sides of such junctions were also detected using convergent beam electron diffraction combined with simulation. Different from the ideal models suggested by the theoretical studies on the (111)ZB−(0001)WZ interface of ZnSe (even other II−VI semiconductors), the present results indicate the existence of the polarity reversal across the junctions, which may result in charge accumulations around the interfaces. Therefore, it offers an interesting real system for theoretical investigation on such polytypic interface and also an appropriate experimental platform for further electrical transport measurement across these junctions.
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pressure variationevaporation processtypetransport measurementjunctionZBpolytypic interfaceZnSe Heterocrystalline Junctionsorientation relationshipsconvergent beam electron diffractionIIcharge accumulationselectron microscopy techniquespolarity reversalstereographic projectionsarea electron diffraction