Supplement Number 1

FIG. S1. Surface potential differences of Au, MoS2 and Ag. FIG. S2. Continuously test the photocurrent response of the transistor for 340 s under the 405 nm light. FIG. S3. The I-t curves of the transistor at light wavelengths of 660(a), 808 (b), 1064 (c), and 1550 nm (d), respectively. FIG. S4. The photocurrent densities of transistors based on MoS2 with different thicknesses under the same light illumination. FIG. S5. Linearly fit the dark current-voltage curve to obtain the approximate shunt resistance of the transistor. FIG. S6. Comparison of R and the corresponding response wavelengths of photodetectors made of different materials. FIG. S7. Schematic diagrams of the response currents under the stimulation of two (a) and ten (b) consecutive 405 nm light pulses.