<b>Controlling the Rectification Properties of Schottky Barrier Enhanced Molecular Diodes with Electrode Doping and Monolayer Tunning</b>

<p dir="ltr">Changing the electronic properties of molecular diodes normally requires tedious chemical synthesis. So far, most molecular diodes have been optimized with metallic electrodes which do now allow for making changes to the system to control the rectification direction or improve performance. Here, we introduce a Schottky barrier enhanced with molecular diodes allowing us to control the rectification ratio and conduction direction based on junctions with (n- or p-type) silicon semiconductor coated with a thin layer of Au (Si(N100/P100)-Au array electrodes) supporting different types of monolayers (1-decanethiolate (C₁₀H₂₂S), 1,4-benzenedithiolate (BDT) and 11-ferrocenyl-1-undecanethiale (HSC₁₁Fc)). Our results show that the bottom electrode doping type causes reversal of rectification while the different molecular monolayers results in control over rectification ratios of 14 to 1.7×10³<a href="" target="_blank">.</a> Temperature dependent experiments show that the Schottky barrier on the Si(P100)-Au array electrode dominates the mechanism of charge transport <a href="" target="_blank">while the change in carrier concentration and Schottky barrier on the Si(N100)-Au array electrode jointly contribute to the transport</a>. Simulations and Schottky diode formula fitting verify the <a href="" target="_blank">synergistic effect</a> of the interface barrier and the energy level alignment. This work combines the advantages of silicon based solid device and molecular monolayer engineering, providing a new strategy for designing integrated and high stable molecular devices.</p>