PVSC-2019-878.pdf (197.39 kB)
Sputtered aluminum oxide and p+ amorphous silicon back-contact for improved hole extraction in polycrystalline CdSexTe1-x and CdTe photovoltaics
conference contribution
posted on 2020-01-24, 14:13 authored by Adam Danielson, Amit Munshi, Arthur Onno, Willam Weigand, Annas Kindvall, Carey Reich, Zhengshan Yu, Jianwei Shi, Darius Kuciauskas, Ali AbbasAli Abbas, Michael WallsMichael Walls, Zachary Holman, Walajabad S SampathA thin layer of Al2O3 at the back of CdSexTe1-x/CdTe
devices is shown to passivate the back interface and drastically
improve surface recombination lifetimes and photoluminescent
response. Despite this, such devices do not show an improvement
in open-circuit voltage (VOC.) Adding a p
+
amorphous silicon layer
behind the Al2O3 bends the conduction band upward, reducing the
barrier to hole extraction and improving collection. Further
optimization of the Al2O3, amorphous silicon (a-Si), and indiumdoped tin oxide (ITO) layers, as well as their interaction with the
CdCl2 passivation process, are necessary to translate these electrooptical improvements into gains in voltage
Funding
Solar Energy Technologies Office (SETO) Agreement Number DE-EE0008552
SIPS Agreement Number DE-EE0008177
U.S. Department of Energy under Contract No. DE-AC36-08- GO28308 with the National Renewable Energy Laboratory
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)Pages
3018 - 3023Source
46th IEEE Photovoltaics Specialist Conference (PVSC)Publisher
IEEEVersion
- AM (Accepted Manuscript)
Rights holder
© IEEEPublisher statement
Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Acceptance date
2019-06-21Publication date
2020-02-06Copyright date
2019ISBN
9781728104942ISSN
0160-8371Publisher version
Language
- en
Location
Chicago, ILEvent dates
17th June 2019 - 21st June 2019Depositor
Dr Ali Abbas x. Deposit date: 21 January 2020Usage metrics
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