Power Handling cjp.pdf (519.37 kB)
Power handling of a photoconductive microwave switch
conference contribution
posted on 2017-03-07, 13:46 authored by Emma K. Kowalczuk, Rob SeagerRob Seager, Chinthana PanagamuwaChinthana PanagamuwaThe power handling performance of a
photoconductive microwave switch up to an RF input power of 44dBm (25W) is presented. The switch consists of a lightly doped die of silicon mounted over a gap in a transmission line. A 2GHz signal is applied through the switch and the 1dB compression point is analysed.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
Loughborough Antennas and Propagation ConferenceCitation
KOWALCZUK, E.K., SEAGER, R.D. and PANAGAMUWA, C.J., 2016. Power handling of a photoconductive microwave switch. Presented at the Loughborough Antennas and Propagation Conference (LAPC 2016), Loughborough, 14-15 Nov.Publisher
© IEEEVersion
- AM (Accepted Manuscript)
Acceptance date
2016-08-24Publication date
2016Notes
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.ISBN
9781509007837Publisher version
Language
- en