Performance Evaluation of a Self-Biased Current Reference Source Using Uniformly Doped and Halo-Implanted Channel Transistors

This paper presents a performance comparison of a self-biased current reference source tolerant to supply voltage variations built with uniformly doped and halo-implanted channel transistors. The proposed topology was designed in a 130 nm CMOS process to provide a current reference of 30 µA under 3.3 V supply voltage. The results obtained proves a better performance of the uniformly doped transistors with a current reference’s sensitivity to supply voltage of 0.7% and a temperature coefficient of 23.8 ppm/ºC, whilst the halo-implanted transistors has a current reference’s sensitivity to supply voltage of 15.3% and a temperature coefficient of 66.8 ppm/ºC.