## The present single-ionization cross section of Sn<sup>8 +</sup> compared to the results of the present CADW calculations

2013-08-07T00:00:00Z (GMT) by
<p><strong>Figure 7.</strong> The present single-ionization cross section of Sn<sup>8 +</sup> compared to the results of the present CADW calculations. Same notation as in figure <a href="http://iopscience.iop.org/0953-4075/46/17/175201/article#jpb473129f2" target="_blank">2</a>. The brackets with arrows denote energy ranges, where REDA processes involving 3d-subshell excitations are to be expected. The brackets with arrows denote energy ranges, where REDA processes involving 3d- and 3p-subshell excitations are to be expected. The dark-shaded area at the bottom of the graph represents the total ionization contribution of the 4d<sup>5</sup>4f excited-ion-beam component with an estimated fraction of 0.6%.</p> <p><strong>Abstract</strong></p> <p>Electron-impact single-ionization cross sections of Sn<sup><em>q</em> +</sup> ions in charge states <em>q</em> = 4–13 with 4d<sup>[10 − (<em>q</em> − 4)]</sup> outer-shell configurations have been studied in the energy range from the corresponding thresholds up to 1000 eV. Absolute cross sections and fine-step energy-scan data have been measured employing the crossed-beams technique. Contributions of different ionization mechanisms have been analysed by comparing the experimental data with calculations employing the configuration-averaged distorted wave approximation. Ionization plasma rate coefficients inferred from the experimental data are also presented.</p>