Voltage Controlled Memristor Threshold Logic Gates

2016-08-30T05:13:44Z (GMT) by Alex Pappachen James Akshay Maan
In this paper, we present  a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND to NOR functionality. We further show how threshold logic in the voltage-controlled resistive cell can be used  to implement a XOR logic. Building on the same principle we implement a half adder and a 4-bit CLA (Carry Look-ahead Adder) and show that in comparison with CMOS-only logic, the proposed system shows significant improvements in terms of device area, power dissipation and leakage power.<div><br></div><div>To appear in the proceedings of <i><b>2016 IEEE Asia Pacific Conference on Circuits & Systems (IEEE APCCAS 2016)</b>,</i>  Jeju, Korea, October 25-28, 2016<br><div><br></div></div>