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Tuning Optical Signatures of Single- and Few-Layer MoS2 by Blown-Bubble Bulge Straining up to Fracture
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posted on 2017-06-19, 00:00 authored by Rui Yang, Jaesung Lee, Souvik Ghosh, Hao Tang, R. Mohan Sankaran, Christian A. Zorman, Philip X.-L. FengEmerging atomic layer
semiconducting crystals such as molybdenum
disulfide (MoS2) are promising candidates for flexible
electronics and strain-tunable devices due to their ultrahigh strain
limits (up to ∼20–30%) and strain-tunable bandgaps.
However, high strain levels, controllable isotropic and anisotropic
biaxial strains in single- and few-layer MoS2 on device-oriented
flexible substrates permitting convenient and fast strain tuning,
remain unexplored. Here, we demonstrate a “blown-bubble”
bulge technique for efficiently applying large strains to atomic layer
MoS2 devices on a flexible substrate. As the strain increases
via bulging, we achieve continuous tuning of Raman and photoluminescence
(PL) signatures in single- and few-layer MoS2, including
splitting of Raman peaks. With proper clamping of the MoS2 crystals, we apply up to ∼9.4% strain in the flexible substrate,
which causes a doubly clamped single-layer MoS2 to fracture
at 2.2–2.6% strain measured by PL and 2.9–3.5% strain
measured by Raman spectroscopy. This study opens new pathways for
exploiting 2D semiconductors on stretchable substrates for flexible
electronics, mechanical transducers, tunable optoelectronics, and
biomedical transducers on curved and bulging surfaces.
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single-layer MoS 2strain-tunable bandgapstunable optoelectronicsstrain increasesmolybdenum disulfideFew-Layer MoS 22 D semiconductorsultrahigh strain limitsstrain-tunable devicesMoS 2layer semiconducting crystalsPLRaman spectroscopyRaman peaksstrain levelsfew-layer MoS 2Blown-Bubble Bulge Straininganisotropic biaxial strainsTuning Optical Signatureslayer MoS 2 devicesstretchable substratesMoS 2 crystals
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