Synthesis of two aminosilanes as CVD precursors of SiC_xN_y films: Tuning film composition by Molecular Structures

Two aminosilanes derived from hexamethyldisilazane as chemical vapor deposition (CVD) precursors for SiC_xN_y and relevant films have been reported and characterized by ¹H, ¹³C, and ²⁹Si NMR as well as by EI-MS and elemental analysis, where necessary. Thermal stability, transport behavior and vapor pressures were evaluated by simultaneous thermal analyses (STA). Chemical vapor deposition was accomplished in a hot wall CVD reactor system to further demonstrate the ability of these compounds as CVD precursors. Most importantly, characterization (XPS) of the as-grown films proved that the composition of the films can be controlled by the molecular structure of the precursors. The result suggests future strategy for the design of CVD precursors for SiC_xN_y and related films.