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Phosphorus Concentration Dependent Microstructure and Optical Property of ZnO Nanowires Grown by High-Pressure Pulsed Laser Deposition
journal contribution
posted on 2015-02-26, 00:00 authored by Zhiwen Qiu, Haibo Gong, Xiaopeng Yang, Zichao Zhang, Jun Han, Bingqiang Cao, Daisuke Nakamura, Tatsuo OkadaPhosphorus-doped ZnO (ZnO:P) nanowires
were grown by the high-pressure
pulsed laser deposition process (HP-PLD), where phosphorus pentoxide
is used as the dopant source. The morphology, composition, and microstructural
changes of ZnO nanowires after phosphorus doping were investigated
with scanning electron microscopy, X-ray diffraction spectrum, energy-dispersive
X-ray spectrum, transmission electron microscope, and Raman scattering
spectrum. Optical fingerprints of ZnO:P nanowires like neutral acceptor-bound
exciton emission (3.357 eV, A0X), free-electron to neutral-acceptor
emission (3.311 eV, FA), and their longitudinal optical (LO) phonon
replicas were observed, and their dependence on the phosphorus doping
concentration was investigated with room/low-temperature photoluminescence
spectra. It indicates that acceptor levels with a binding energy of
about 130 meV were formed, and the optimized phosphorus concentration
was realized with the ZnO:P2O5 (2 wt %) target.
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dopant sourcebinding energyphosphorus pentoxidephosphorus dopingOptical fingerprints0XPhosphorus Concentration Dependent Microstructurelaser deposition processFAacceptor levelsZnO Nanowires Growntransmission electron microscope130 meVspectrumscanning electron microscopyOptical Propertymicrostructural changesphosphorus doping concentrationphonon replicasoptimized phosphorus concentrationZnO nanowiresLO
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