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Performance and Stability of Aerosol-Jet-Printed Electrolyte-Gated Transistors Based on Poly(3-hexylthiophene)
journal contribution
posted on 2013-07-24, 00:00 authored by Se Hyun Kim, Kihyon Hong, Keun Hyung Lee, C. Daniel FrisbieWe report performance optimization
and stability analysis of aerosol-jet-printed electrolyte-gated transistors
(EGTs) based on the polymer semiconductor poly(3-hexylthiophene) (P3HT).
EGTs were optimized with respect to printed P3HT thickness and the
completed device annealing temperature. EGTs with relatively thin
P3HT films (∼50 nm) annealed at 120 °C have the best performance
and display an unusual combination of metrics including sub-1-V operation,
ON/OFF current ratios of 106, OFF currents of <10–10 A (<10–6 A cm–2), saturation hole mobilities of 1.3 cm2 V–1 s–1, threshold voltages of −0.3 V, and
subthreshold swings of 70 mV decade–1. Furthermore,
optimized EGTs printed on polyester substrates are extremely robust
to bias stress and repeated mechanical bending strain. Collectively,
the results suggest that optimized P3HT-based EGTs are promising devices
for printed, flexible electronics.