Performance and Stability of Aerosol-Jet-Printed Electrolyte-Gated Transistors Based on Poly(3-hexylthiophene)

We report performance optimization and stability analysis of aerosol-jet-printed electrolyte-gated transistors (EGTs) based on the polymer semiconductor poly­(3-hexylthiophene) (P3HT). EGTs were optimized with respect to printed P3HT thickness and the completed device annealing temperature. EGTs with relatively thin P3HT films (∼50 nm) annealed at 120 °C have the best performance and display an unusual combination of metrics including sub-1-V operation, ON/OFF current ratios of 106, OFF currents of <10–10 A (<10–6 A cm–2), saturation hole mobilities of 1.3 cm2 V–1 s–1, threshold voltages of −0.3 V, and subthreshold swings of 70 mV decade–1. Furthermore, optimized EGTs printed on polyester substrates are extremely robust to bias stress and repeated mechanical bending strain. Collectively, the results suggest that optimized P3HT-based EGTs are promising devices for printed, flexible electronics.