Optical
Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like
Semiconductors with High Laser-Damage Thresholds

Rosmus, Kimberly
A.; Brant, Jacilynn A.; Wisneski, Stephen D.; Clark, Daniel J.; Kim, Yong Soo; Jang, Joon I.; Brunetta, Carl D.; Zhang, Jian-Han; Srnec, Matthew
N.; Aitken, Jennifer A.

doi:10.1021/ic501310d.s001

ic501310d_si_001.pdf (1.55 MB)

Optical Nonlinearity in Cu₂CdSnS₄ and α/β-Cu₂ZnSiS₄: Diamond-like Semiconductors with High Laser-Damage Thresholds

journal contribution

posted on 2014-08-04, 00:00 authored by Kimberly A. Rosmus, Jacilynn A. Brant, Stephen D. Wisneski, Daniel J. Clark, Yong Soo Kim, Joon I. Jang, Carl D. Brunetta, Jian-Han Zhang, Matthew N. Srnec, Jennifer A. Aitken

Cu₂CdSnS₄ and α/β-Cu₂ZnSiS₄ meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu₂CdSnS₄ and α/β-Cu₂ZnSiS₄ display wide ranges of optical transparency, 1.4–25 and 0.7–25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu₂CdSnS₄ is 0.2 GW/cm², whereas α/β-Cu₂ZnSiS₄ has a LDT of 2.0 GW/cm² for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.