ON APPROACH TO ANALYZE NONLINEAR MODEL OF MASS AND HEAT TRANSPORT DURING GAS PHASE EPITAXY. A POSSIBILITY TO IMPROVE PROPERTIES OF FILMS

In this paper we introduce an analytical approach to calculate the distribution of velocity of flow of the gas mixture, the concentration distributions of the growth component and temperature fields in the zone of deposition of semiconductor layers in chemical vapor deposition using a reaction chamber with a rotating disk substrate holder. The results of analysis of the temperature and concentration fields in the reduced and atmospheric conditions (~ 0.1 atm.) pressure in the reaction chamber obtained based on the proposed theoretical models.