nl5b04215_si_001.pdf (1021.2 kB)
Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes
journal contribution
posted on 2016-02-04, 16:35 authored by S. M. Sadaf, Y. H. Ra, T. Szkopek, Z. MiWe
have demonstrated for the first time an n++-GaN/Al/p++-GaN backward diode, wherein
an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes
(LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance,
and enhanced power, compared to nanowire LEDs without the use of Al
tunnel junction or with the incorporation of an n++-GaN/p++-GaN tunnel junction.
This unique Al tunnel junction overcomes some of the critical issues
related to conventional GaN-based tunnel junction designs, including
stress relaxation, wide depletion region, and light absorption, and
holds tremendous promise for realizing low-resistivity, high-brightness
III-nitride nanowire LEDs in the visible and deep ultraviolet spectral
range. Moreover, the demonstration of monolithic integration of metal
and semiconductor nanowire heterojunctions provides a seamless platform
for realizing a broad range of multifunctional nanoscale electronic
and photonic devices.