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Mechanism of Light-Soaking Effect in Inverted Polymer Solar Cells with Open-Circuit Voltage Increase
journal contribution
posted on 2017-04-25, 08:13 authored by Takuji Kusumi, Takayuki Kuwabara, Kyosuke Fujimori, Takumi Minami, Takahiro Yamaguchi, Tetsuya Taima, Kohshin Takahashi, Tatsuya Murakami, Vanadian Astari Suci Atina Rachmat, Kazuhiro MarumotoIn
this study, we present novel insights into the light-soaking
effect of inverted polymer solar cells (PSCs), where the open-circuit
voltage (Voc) of the cells improves over
time under light irradiation. The effect was investigated by electron
spin resonance (ESR) studies of bare indium tin oxide (ITO) and piperazine
derivative-modified ITO/regioregular poly(3-hexylthiophene) (P3HT):[6,6]-phenyl
C61 butyric acid methyl ester (PCBM) substrates. These
results were combined with alternating current impedance spectroscopy
(IS) measurements of inverted PSCs based on the above substrates.
In ESR experiments with the substrates under white light irradiation,
with a UV light component, many P3HT•+ radical cations
were observed in the bare-ITO/P3HT:PCBM substrate. The number of radical
cations was considerably suppressed in the ITO/P3HT:PCBM substrates
with ITO modified by piperazine derivatives. This is because adsorbed
oxygen molecules on the ITO acted as acceptor dopants for photoexcited
P3HT, and the amount of adsorbed oxygen was decreased by modifying
the ITO with piperazine derivatives. In IS measurements of the inverted
PSCs under white light irradiation, a decrease in the electric capacitance
(CPE2) of an electric double layer formed at the ITO/P3HT:PCBM interface
was observed. A strong correlation was observed between the decrease
of CPE2 and the increase of Voc. From
these results, the light-soaking behavior was attributed to the removal
of an electron injection barrier formed between ITO and PCBM, under
white light irradiation.