nn7b04100_si_001.pdf (2.07 MB)
Low Variability in Synthetic Monolayer MoS2 Devices
journal contribution
posted on 2017-07-11, 00:00 authored by Kirby
K. H. Smithe, Saurabh V. Suryavanshi, Miguel Muñoz Rojo, Aria D. Tedjarati, Eric PopDespite
much interest in applications of two-dimensional (2D) fabrics
such as MoS2, to date most studies have focused on single
or few devices. Here we examine the variability of hundreds of transistors
from monolayer MoS2 synthesized by chemical vapor deposition.
Ultraclean fabrication yields low surface roughness of ∼3 Å
and surprisingly low variability of key device parameters, considering
the atomically thin nature of the material. Threshold voltage variation
and very low hysteresis suggest variations in charge density and traps
as low as ∼1011 cm−2. Three extraction
methods (field-effect, Y-function, and effective mobility) independently
reveal mobility from 30 to 45 cm2/V/s (10th to 90th percentile;
highest value ∼48 cm2/V/s) across areas >1 cm2. Electrical properties are remarkably immune to the presence
of bilayer regions, which cause only small conduction band offsets
(∼55 meV) measured by scanning Kelvin probe microscopy, an
order of magnitude lower than energy variations in Si films of comparable
thickness. Data are also used as inputs to Monte Carlo circuit simulations
to understand the effects of material variability on circuit variation.
These advances address key missing steps required to scale 2D semiconductors
into functional systems.
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energy variationsUltraclean fabrication yieldsbilayer regionsSynthetic Monolayer MoS 2 Devicesmonolayer MoS 2advances addressMonte Carlo circuit simulationsconduction bandLow VariabilityMoS 2Electrical propertiesscanning Kelvin probe microscopymaterial variabilitycmmobilitycharge densitydevice parametersSi filmsscale 2 D semiconductorssurface roughnesscircuit variationchemical vapor depositionthreshold voltage variationextraction methods
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