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Low-Temperature, Solution-Based Sulfurization and Necking of PbS CQD Films
journal contribution
posted on 2016-08-24, 00:00 authored by Alexandros Stavrinadis, David So, Gerasimos KonstantatosLead sulfide colloidal quantum dots
(CQDs) are a promising optoelectronic
material. The optoelectronic functionality of PbS CQD films largely
depends on the anionic ligands that passivate the Pb-rich surface
of the CQDs’ inorganic cores. Herein, we report a simple solution-based
method for fabricating PbS CQD films using sulfur as the ligand. In
turn, passivation of the CQDs with sulfur promotes the chemisorption
of oxygen. Overall, this approach results in efficient removal of
the original organic ligands and in enhanced interdot electronic coupling.
The CQD films present increased p-type doping, higher majority carrier
mobility, and higher photoresponsivity as compared to state-of-the-art
halide-passivated CQD films. The simple postsynthetic sulfurization
strategy described herein can be potentially applied in a variety
of metal sulfide and selenide nanomaterials whose optoelectronic functionalities
in part depend on the chalcogen to metal atomic ratio.
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optoelectronic functionalitymajority carrier mobilityPb-rich surfaceoptoelectronic materialligandapproach resultsPbS CQD Filmsp-type dopingCQD filmssolution-based methodoptoelectronic functionalitiespostsynthetic sulfurization strategyquantum dotsSolution-Based Sulfurizationmetal sulfideselenide nanomaterialshalide-passivated CQD filmsPbS CQD films
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