jp502092h_si_001.pdf (1.7 MB)
Influence of the Oxygen Substoichiometry and of the Hydrogen Incorporation on the Electronic Band Structure of Amorphous Tungsten Oxide Films
journal contribution
posted on 2014-06-19, 00:00 authored by Maria Vasilopoulou, Ioannis Kostis, Nikolaos Vourdas, Giorgos Papadimitropoulos, Antonios Douvas, Nikolaos Boukos, Stella Kennou, Dimitris DavazoglouThe
influence of the oxygen substoichiometry and of the hydrogen incorporation
on the electronic structure of amorphous tungsten oxide films was
investigated. It was found that both of them cause the appearance
of intermediate bands (IBs) within the energy gap; approximately 3
and 1 eV below the edge of the conduction band (CB), respectively.
The hydrogen is incorporated into the W–O network bonding either
to the oxygen or to the tungsten ions. In the former case, the electronic
structure of the material retains the characteristics of amorphous
stoichiometric tungsten oxide with, additionally, the two IBs. In
the latter case, the electronic structure of tungsten oxide is seriously
perturbed because in addition to the IBs the 1s orbitals of the hydrogen
also contribute to the formation of the edges of valence and CBs causing
the delocalization of electrons. Carriers donated by the incorporated
hydrogen ions are excited in the CB, causing plasma oscillations and
red shifting photoluminescence.
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Oxygen Substoichiometryplasma oscillations1 eVlatter caseoxygen substoichiometrytungsten oxide filmstungsten oxidehydrogen incorporationCBhydrogen ionsHydrogen Incorporationenergy gapIBconduction bandElectronic Band Structuretungsten ionsstoichiometric tungsten oxideAmorphous Tungsten Oxide FilmsThe influence
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