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Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate
journal contribution
posted on 2018-07-18, 18:51 authored by Phuong V. PhamThe
H2-induced etching of low-dimensional materials is of significant
interest for controlled architecture design of crystalline materials
at the micro- and nanoscale. This principle is applied to the thinnest
crystalline etchant, graphene. In this study, by using a high H2 concentration, the etched hexagonal holes of copper quantum
dots (Cu QDs) were formed and embedded into the large-scale graphene
region by low-pressure chemical vapor deposition on a liquid Cu/W
surface. With this procedure, the hexagon flower-etched Cu patterns
were formed in a H2 environment at a higher melting temperature
of Cu foil (1090 °C). The etching into the large-scale graphene
was confirmed by optical microscopy, atomic force microscopy, scanning
electron microscopy, and Raman analysis. This first observation could
be an intriguing case for the fundamental study of low-dimensional
material etching during chemical vapor deposition growth; moreover,
it may supply a simple approach for the controlled etching/growth.
In addition, it could be significant in the fabrication of controllable
etched structures based on Cu QD patterns for nanoelectronic devices
as well as in-plane heterostructures on other low-dimensional materials
in the near future.
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H 2 environmentchemical vapor deposition growthH 2 concentrationlow-dimensional materialslow-dimensional material etchingHexagon Flower Quantum Dot-like Cu Pattern Formationlow-pressure chemical vapor depositionCu QD patternscopper quantum dotshexagon flower-etched Cu patternsscanning electron microscopygrapheneLow-Pressure Chemical Vapor Deposited Graphene Growth
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