am6b00950_si_001.pdf (437.6 kB)
Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor
journal contribution
posted on 2016-04-27, 00:00 authored by Su Jeong Lee, Jieun Ko, Ki-Ho Nam, Taehee Kim, Sang Hoon Lee, Jung Han Kim, Gee Sung Chae, Hs Han, Youn Sang Kim, Jae-Min MyoungFlexible and foldable thin-film transistors
(TFTs) have been widely studied with the objective of achieving high-performance
and low-cost flexible TFTs for next-generation displays. In this study,
we introduced the fabrication of foldable TFT devices with excellent
mechanical stability, high transparency, and high performance by a
fully solution process including PI, YOx, In2O3, SWCNTs, IL-PVP, and Ag NWs. The fabricated
fully solution-processed TFTs showed a higher transmittance above
86% in the visible range. Additionally, the charge-carrier mobility
and Ion/Ioff ratio of them were 7.12 ± 0.43 cm2/V·s and
5.53 ± 0.82 × 105 at a 3 V low voltage operating,
respectively. In particular, the fully solution-processed TFTs showed
good electrical characteristics under tensile strain with 1 mm bending
and even extreme folding up to a strain of 26.79%. Due to the good
compatibility of each component layer, it maintained the charge-carrier
mobility over 79% of initial devices after 5,000 cycles of folding
test in both the parallel and perpendicular direction with a bending
radius of 1 mm. These results show the potential of the fully solution-processed
TFTs as flexible TFTs for a next generation devices because of the
robust mechanical flexibility, transparency, and high electrical performance
of it.