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Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells
conference contribution
posted on 2018-12-13, 14:47 authored by Mustafa Togay, Sona Ulicna, Syeda Bukhari, Fabiana Lisco, Martin BlissMartin Bliss, Alex Eeles, Michael WallsMichael Walls, Jake BowersJake BowersThis study investigates the metastable defect
behavior from temperature dependent current density-voltage
(JVT) and capacitance spectroscopy measurements in solutionprocessed
antimony (Sb) doped CIGS thin film solar cells. From
the Voc(T) analysis, the main recombination mechanism is found
to be Schottky-Read-Hall recombination in the bulk. A detailed
study of the carrier concentration, defect density and energy level
defects was performed using capacitance spectroscopy.
Admittance spectroscopy measurements revealed an admittance
step at low temperatures with an activation energy of 42 meV.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Published in
7th World Conference on Photovoltaic Energy Conversion (WCPEC-7)Citation
TOGAY, M. ... et al., Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells. Presented at the IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Waikoloa, Hawaii, US, 10-15 Jun, pp. 1960-1965.Publisher
© IEEEVersion
- AM (Accepted Manuscript)
Publication date
2018Notes
Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.ISBN
9781538685297ISSN
0160-8371Publisher version
Language
- en