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Exceptional Dewetting of Organic Semiconductor Films: The Case of Dinaphthothienothiophene (DNTT) at Dielectric Interfaces
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posted on 2017-02-20, 00:00 authored by Tobias Breuer, Andrea Karthäuser, Hagen Klemm, Francesca Genuzio, Gina Peschel, Alexander Fuhrich, Thomas Schmidt, Gregor WitteThe
novel organic semiconductor dinaphthothienothiophene (DNTT) has gained
considerable interest because its large charge carrier mobility and
distinct chemical robustness enable the fabrication of organic field
effect transistors with remarkable long-term stability under ambient
conditions. Structural aspects of DNTT films and their control, however,
remain so far largely unexplored. Interestingly, the crystalline structure
of DNTT is rather similar to that of the prototypical pentacene, for
which the molecular orientation in crystalline thin films can be controlled
by means of interface-mediated growth. Combining atomic force microscopy,
near-edge X-ray absorption fine structure, photoelectron emission
microscopy, and X-ray diffraction, we compare substrate-mediated control
of molecular orientation, morphology, and wetting behavior of DNTT
films on the prototypical substrates SiO2 and graphene
as well as technologically relevant dielectric surfaces (SiO2 and metal oxides that were pretreated with self-assembled monolayers
(SAMs)). We found an immediate three-dimensional growth on graphene
substrates, while an interfacial wetting layer is formed on the other
substrates. Rather surprisingly, we observe distinct temporal changes
of DNTT thin films on SiO2 and the SAM-treated dielectric
substrates, which exhibit a pronounced dewetting and island formation
on time scales of minutes to hours, even under ambient conditions,
leading to a breakup of the initially closed wetting layer. These
findings are unexpected in view of the reported long-time stability
of DNTT-based devices. Therefore, their future consideration is expected
to enable the further improvement of such applications, especially
since these structural modifications are equivalently observed also
on the SAM-treated dielectric surfaces, which are commonly used in
device processing.