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Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode
journal contribution
posted on 2019-10-09, 16:39 authored by Woohyun Kim, Chanyoung Yoo, Eui-Sang Park, Manick Ha, Jeong Woo Jeon, Gil Seop Kim, Kyung Seok Woo, Yoon Kyeung Lee, Cheol Seong HwangChalcogenide
materials have been regarded as strong candidates
for both resistor and selector elements in passive crossbar arrays
owing to their dual capabilities of undergoing threshold and resistance
switching. This work describes the bipolar resistive switching (BRS)
of amorphous GeSe thin films, which used to show Ovonic threshold
switching (OTS) behavior. The behavior of this new functionality of
the material follows filament-based resistance switching when Ti and
TiN are adopted as the top and bottom electrodes, respectively. The
detailed analysis revealed that the high chemical affinity of Ti to
Se produces a Se-deficient GexSe1–x matrix and the interfacial Ti–Se layer. Electroforming-free
BRS behavior with reliable retention and cycling endurance was achieved.
The performance improvement was attributed to the Ti–Se interfacial
layer, which stabilizes the composition of GeSe during the electrical
switching cycles by preventing further massive Se migration to the
top electrode. The conduction mechanism analysis denotes that the
resistance switching originates from the formation and rupture of
the high-conductance semiconducting Ge-rich GexSe1–x filament. The high-resistance
state follows the modified Poole–Frenkel conduction.
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high-resistance stateperformance improvementElectroforming-free BRS behaviorElectroforming-Free Bipolar Resistive SwitchingGeSecycling enduranceselector elementsSe migrationchemical affinityTi-Containing Electrode Chalcogenide materialscrossbar arraysshow Ovonic thresholdfilament-based resistancebottom electrodesGeconduction mechanism analysisOTS
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