am507478q_si_001.pdf (258.7 kB)
Electrical Characteristics of Metal Catalyst-Assisted Etched Rough Silicon Nanowire Depending on the Diameter Size
journal contribution
posted on 2015-01-14, 00:00 authored by Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Sang Myung Lee, Ilgu Yun, Jae Min MyoungThe
dependence of electrical properties of rough and cylindrical
Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted
etching (MCE) on the size of the NW’s diameter was demonstrated.
Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor
(FET) embedded in a polyvinylphenol adhesive and dielectric layer
were fabricated. As the diameter of Si NW increased, the mobility
of FET increased from 80.51 to 170.95 cm2/V·s and
the threshold voltage moved from −7.17 to 0 V because phonon–electron
wave function overlaps, surface scattering, and defect scattering
decreased and gate coupling increased as the ratio of surface-to-volume
got reduced.