am6b05555_si_001.pdf (191.33 kB)
Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters
journal contribution
posted on 2016-07-11, 00:00 authored by Jae Joon Kim, Jun Mok Ha, Hyeok Moo Lee, Hamid
Saeed Raza, Ji Won Park, Sung Oh ChoThe effects of electron-beam irradiation
on the organic semiconductor rubrene and its application as a dosimeter
was investigated. Through the measurements of photoluminescence and
the ultraviolet photoelectron spectroscopy, we found that electron-beam
irradiation induces n-doping of rubrene. Additionally, we fabricated
rubrene thin-film transistors with pristine and irradiated rubrene,
and discovered that the decrease in transistor properties originated
from the irradiation of rubrene and that the threshold voltages are
shifted to the opposite directions as the irradiated layers. Finally,
a highly sensitive and air-stable electron dosimeter was fabricated
based on a rubrene transistor.