Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise

The files correspond to experimental results in paper: "Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise" published in IEEE Journal of Selected Topics in Quantum Electronics, DOI: https://doi.org/10.1109/JSTQE.2017.2725441

There are two types of files:
- .png, which correspond to the figures
- .csv, which are raw data in figures

This work reports the excess noise characterization in a series of Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.

The data consists of results from Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.